2SB1120 features low collector-to-emitter saturation voltage : v ce(sat) max=-0.45v. large current capacity : i c =-2.5a, i cp =-5a. very small size making it easy to provide highdensity, small-sized hybrid ic? s. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -10 v emitter-base voltage v ebo -7 v collector current i c -2.5 a collector current (pulse) i cp -5 a collector dissipation p c 500 mw jumction temperature t j 150 storage temperature t stg -55to+150 h fe classification marking rank e f g hfe 100 200 160 320 280 560 bc electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -16v , i e = 0 -100 na emitter cutoff current i ebo v cb =-4v,i e = 0 -100 na v ce =-2v,i c = -500ma 100 560 v ce =-2v i c =-3a 70 gain bandwidth product f t v ce = -10v , i c = -50ma 250 mhz collector-emitter saturation voltage v ce(sat) i c = -1.5a , i b = -0.15a -0.25 -0.45 v collector-base breakdown voltage v (br)cbo i c = -10a , i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -10 v emitter-base breakdown voltage v (br)ebo i e = -10a , i c =0 -7 v output capacitance c ob v cb =-10v,f=1mhz 70 pf dc current gain h fe product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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